2n7002k document number: ds30896 rev. 14 - 2 1 of 6 www.diodes.com august 2013 ? diodes incorporated 2n7002k new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 60v 2? @ v gs = 10v 380ma 3? @ v gs = 5v 310ma description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? motor control ? power management functions ? backlighting features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 2kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number compliance case packaging 2n7002k-7 standard sot23 3000/tape & reel 2n7002kq-7 automotive sot23 3000/tape & reel 2N7002K-13 standard sot23 10000/tape & reel 2n7002kq-13 automotive sot23 10000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html marking information date code key year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 code t u v w x y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view esd protected up to 2kv top view d g s equivalent circuit source gate protection diode gate drain k7k = product type marking code ym = date code marking for sat (shanghai assembly/ test site) = date code marking for cat (chengdu assembly/ test site) y or = year (ex: a = 2013) m = month (ex: 9 = september) chengdu a/t site shanghai a/t site e3 k7k ym k7k ym y y m
2n7002k document number: ds30896 rev. 14 - 2 2 of 6 www.diodes.com august 2013 ? diodes incorporated 2n7002k new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 380 300 ma t<5s t a = +25c t a = +70c i d 430 340 ma continuous drain current (note 6) v gs = 5v steady state t a = +25c t a = +70c i d 310 240 ma t<5s t a = +25c t a = +70c i d 350 270 ma maximum continuous body diode forward current (note 6) i s 0.5 a pulsed drain current (10s pulse, duty cycle = 1%) (note 6) i dm 1.2 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 370 mw thermal resistance, junction to ambient (note 5) steady state r ja 357 c/w t<5s 292 total power dissipation (note 6) p d 540 mw thermal resistance, junction to ambient (note 6) steady state r ja 240 c/w t<5s 197 thermal resistance, junction to case (note 6 ) r jc 91 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 60 ? ? v v gs = 0v, i d = 10a zero gate voltage drain current i dss ? ? 1.0 a v ds = 60v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1.0 1.6 2.5 v v ds = 10v, i d = 1ma static drain-source on-resistance r ds(on) ? ? ? 2.0 3.0 ? v gs = 10v, i d = 0.5a v gs = 5v, i d = 0.05a forward transfer admittance |y fs | 80 ? ? ms v ds =10v, i d = 0.2a diode forward voltage v sd ? 0.75 1.1 v v gs = 0v, i s = 115ma dynamic characteristics (note 8) input capacitance c iss ? 30 50 pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? 4.2 25 pf reverse transfer capacitance c rss ? 2.9 5.0 pf gate resistance r g ? 133 ? ? f = 1mhz , v gs = 0v, v ds = 0v total gate charge q g ? 0.3 ? nc v gs = 4.5v, v ds = 10v, i d = 250ma gate-source charge q g s ? 0.2 ? nc gate-drain charge q g d ? 0.08 ? nc turn-on delay time t d ( on ) ? 3.9 ? ns v dd = 30v, v gs = 10v, r g = 25 ? , i d = 200ma turn-on rise time t r ? 3.4 ? ns turn-off delay time t d ( off ) ? 15.7 ? ns turn-off fall time t f ? 9.9 ? ns notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout 6. device mounted on 1? x 1? fr-4 pcb wi th high coverage 2oz. copper, single sided. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
2n7002k document number: ds30896 rev. 14 - 2 3 of 6 www.diodes.com august 2013 ? diodes incorporated 2n7002k new product 0 0.2 0.4 0.6 0.8 1.0 012 34 5 v , drain-source voltage (v) fig. 1 typical output characteristics ds i, d r ai n c u r r e n t (a) d v , gate-source voltage (v) fig. 2 typical transfer characteristics gs t , channel temperature (c) fig. 3 gate threshold voltage vs. channel temperature ch 0 0.5 1 1.5 2 -50 -2502550 75 100 125 150 0.1 i , drain current (a) fig. 4 static drain-source on-resistance vs. drain current d 1 10 1 i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d 10 0 v gate source voltage (v) gs , fig. 6 static drain-source on-resistance vs. gate-source voltage
2n7002k document number: ds30896 rev. 14 - 2 4 of 6 www.diodes.com august 2013 ? diodes incorporated 2n7002k new product 0 t , channel temperature ( c) fig. 7 ch static drain-source on-state resistance vs. channel temperature i , reverse drain current (a) dr 1 i , reverse drain current (a) dr 1 i , drain current (a) d fig.10 forward transfer admittance vs. drain current | y |, f o r wa r d t r a n sfe r admi t t a n c e (s) fs 0.001 0.01 0.1 1 0.1 1 10 100 fig. 11 safe operation area v , drain-source voltage (v) ds i, d r ain c u r r en t (a) d r limited ds(on) t = 150c t = 25c single pulse j(max) a dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w 0 1 2 3 4 5 6 7 8 9 10 t1, pulse duration time (sec) fig. 12 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 single pulse r = 240 c/w r = r * r t - t = p * r ? ?? ? ja ja(t) (t) ja ja ja(t) ? p , peak transient poiwer (w) (pk)
2n7002k document number: ds30896 rev. 14 - 2 5 of 6 www.diodes.com august 2013 ? diodes incorporated 2n7002k new product package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/ datasheets/ap02001.pdf for the latest version 0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 13 transient thermal resistance 0.00001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e r = r * r ? ja(t) (t) ? ? ja ja r = 240c/w duty cycle, d = t1/t2 ? d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 ?? 0 8 - all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 a m j l d f b c h k g k1 x e y c z
2n7002k document number: ds30896 rev. 14 - 2 6 of 6 www.diodes.com august 2013 ? diodes incorporated 2n7002k new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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